| PART |
Description |
Maker |
| M4A5 M1P5 M1P1 M2G9 M5D1 M5M1 M1F9 M1B5 M5B5 M7P9 |
MEDIUM CURRENT SILICON RECTIFIERS
(M2Kx) MEDIUM CURRENT SILICON RECTIFIERS
Header, Breakaway Vertical; Number of Contacts:2; Pitch Spacing:2.54mm; Number of Rows:1; Gender:Header; Series:42375; Body Material:PA Polyamide
KK 100 Hdr Assy Bkwy 30 Ckt Tin
MEDIUM CURRENT SILICON RECTIFIERS 中型电流硅整
|
List of Unclassifed Manufac...
EDAL
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
List of Unclassifed Man...
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O
PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
Continental Device Indi...
|
| 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP |
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 400V
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 600V
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 800V
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 1000V
|
Vishay
|
| SBE818 |
30V, 2.0A Rectifi er
|
Sanyo Semicon Device
|
| SBT80-06JS |
60V, 8A Rectifi er
|
Sanyo Semicon Device
|
| APT50DL60B APT50DL60BG APT50DL60S APT50DL60SG |
Ultrasoft Recovery Rectifi er Diode
|
Microsemi Corporation
|
| APT50DL60BCT APT50DL60BCTG |
Ultrasoft Recovery Rectifi er Diode
|
Microsemi Corporation
|
| CMIDSH1-3 PB-CMIDSH1-1509 |
CMJ0130_CMJH180
1.0A, 30V Low VF Schottky Rectifi er
|
Central Semiconductor Corp
Central Semiconductor C...
|
| 2N604006 2N6042G 2N6040G 2N6043G 2N6045G 2N6040 2N |
Plastic Medium−Power Complementary Silicon Transistors
Plastic Medium?Power Complementary Silicon Transistors
|
http://
ONSEMI[ON Semiconductor]
|
| UF3001 UF3002 UF3003 UF3004 UF3005 UF3006 UF3007 |
Ultra Fast Recovery Pack: DO-201AD
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE拢潞50 TO 1000V CURRENT拢潞 3.0A
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE?0 TO 1000V CURRENT 3.0A
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE?0 TO 1000V CURRENT?/a> 3.0A
ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE?0 TO 1000V CURRENT?3.0A
|
Gulf Semiconductor
|
